“THE EFFECT OF ERBIUM IONS ON SEMICONDUCTOR PHOTODETECTORS: A SILICON MODEL”
Kalit so‘zlar:
Semiconductors, Photodetectors, Erbium ions, Silicon model, Photoluminescence, Photoconductivity, Ion implantation, Optical properties, Electrical properties.Annotatsiya
This article explores the potential of improving the efficiency of semiconductor photodetectors by doping silicon with erbium ions. During the study, photoluminescence and photo-conductivity spectra were analyzed, and the impact of erbium ions on the optical and electrical properties of silicon was examined. The results suggest that silicon doped with erbium can serve as an effective material for optoelectronic devices, particularly for photodetectors operating in the infrared range.
Adabiyotlar
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Internet manbalari
"Ion Implantation in Semiconductors: Basics and Applications". https://www.sciencedirect.com/topics/ion-implantation
"Photoluminescence in Doped Semiconductors". https://www.researchgate.net/publication/photoluminescence_doped
"Advances in Optoelectronic Materials". https://optoelectronics.journal.org/advances_materials
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Litsenziya
Mualliflik huquqi (c) 2025 Scientific journal of the Fergana State University
Ushbu ish Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 Xalqaro litsenziyasi ostida litsenziyalangan.
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