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FTIR ANALYSIS OF SILICON AND OXIDE SILICON THIN FILMS

Mualliflar

  • Muradulla Normuradov

    Doctor of Physical and Mathematical Sciences, Professor, Karshi State University
  • Kuvondik Dovranov

    Karshi State Universit
  • Khuzhamkul Davranov

    Karshi State University
  • Muzaffar Davlatov

    Karshi State University

Kalit so‘zlar:

silicon oxide, FT-IR spectrometer, thin films, absorption spectra, transmission spectra, “ion-plasma” method, refraction index, ATR spectrum

Annotatsiya

FT-IR spectrometers are used to solve various problems of modern analytics. Designed for qualitative analysis, checking the refractive index of thin films, the thickness of thin films. We studied the mid-infrared transmission and absorption spectra, refractive index, layer thickness, standard deviation, incident angle, average interference fringes, and the coupling between silicon and oxygen of thin films obtained by the ion-plasma method.

Mualliflar haqida

  • Kuvondik Dovranov , Karshi State Universit

    PhD student, Karshi State Universit

  • Khuzhamkul Davranov , Karshi State University

    PhD student, Karshi State University

  • Muzaffar Davlatov , Karshi State University

    PhD student, Karshi State University

Adabiyotlar

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Yuklab olishlar

Nashr etilgan

2023-11-28