FTIR ANALYSIS OF SILICON AND OXIDE SILICON THIN FILMS

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Published: нояб. 28, 2023
Keywords:
silicon oxide, FT-IR spectrometer, thin films, absorption spectra, transmission spectra, “ion-plasma” method, refraction index, ATR spectrum

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Normuradov Muradulla Togaevich
Doctor of Physical and Mathematical Sciences, Professor, Karshi State University
Dovranov Kuvondik Turakulovich
Karshi State Universit
Davranov Khuzhamkul Turakulovich
Karshi State University
Davlatov Muzaffar Abduxamidovich
Karshi State University

Abstract

FT-IR spectrometers are used to solve various problems of modern analytics. Designed for qualitative analysis, checking the refractive index of thin films, the thickness of thin films. We studied the mid-infrared transmission and absorption spectra, refractive index, layer thickness, standard deviation, incident angle, average interference fringes, and the coupling between silicon and oxygen of thin films obtained by the ion-plasma method.

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How to Cite
Normuradov , M., Dovranov , K., Davranov , K., & Davlatov , M. (2023). FTIR ANALYSIS OF SILICON AND OXIDE SILICON THIN FILMS. Scientific Journal of the Fergana State University, 29(4), 68. Retrieved from https://journal.fdu.uz/index.php/sjfsu/article/view/2701
Issue
No. 4 (2023): Scientific journal of the Fergana State University (Exact and natural sciences)
Section
Physics and technology
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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Author Biographies

Dovranov Kuvondik Turakulovich, Karshi State Universit

PhD student, Karshi State Universit

Davranov Khuzhamkul Turakulovich, Karshi State University

PhD student, Karshi State University

Davlatov Muzaffar Abduxamidovich, Karshi State University

PhD student, Karshi State University

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