STUDYING THE PROPERTIES OF NANOSCALE STRUCTURES CREATED ON THE SURFACE OF THE SI/CU P SYSTEM FILMS SI/CU

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Published: Oct 26, 2023
Keywords:
silicon, film, energy, nanoelectronics, electron, oxide, semiconductor.

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Alisher Тursunov
Shahrisabz branch of the Tashkent Institute of Chemistry and Technology
Akbar Аxmedov
Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

Abstract

Nanophases and films of SiO2 and metal silicides have been obtained by low-energy (Eo=1-5 keV) implantation of O2+, Ba+, Cu+ and Co+ ions and the by annealing of a free Si/Cu (100) nanofilm systems on the surface. Their surface morphology, composition, energy band parameters, maximum values of the secondary electron emission coefficient, and the quantum yield of photoelectrons have been determined. In particular, it has been shown that the band gap of metal silicides is 0.3-0.4 eV and their specific resistance is 100-500 mkOm×cm.

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How to Cite
Тursunov A., & Аxmedov A. (2023). STUDYING THE PROPERTIES OF NANOSCALE STRUCTURES CREATED ON THE SURFACE OF THE SI/CU P SYSTEM FILMS SI/CU. Scientific Journal of the Fergana State University, 29(2), 129. Retrieved from https://journal.fdu.uz/index.php/sjfsu/article/view/2383
Issue
No. 2 (2023): Scientific journal of the Fergana State University (Exact and natural sciences)
Section
Physics and technology
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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Author Biographies

Alisher Тursunov, Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

Toshkent Kimyo – Texnologiya Instituti Shahrisabz filiali Kimyoviy texnologiya va sifat menejmenti kafedrasi assistent o‘qituvchisi

Akbar Аxmedov, Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

Toshkent Kimyo – Texnologiya Instituti Shahrisabz filiali Kimyoviy texnologiya va sifat menejmenti kafedrasi assistent o‘qituvchisi

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