SI/CU PLYONKA TIZIMINING YUZASIDA YARATILGAN NANO O‘LCHOVLI TUZILMALARNING XUSUSIYATLARINI O‘RGANISH

Alisher Тursunov; Akbar Аxmedov

Physics and technology

No. 2 (2023): Scientific journal of the Fergana State University (Exact and natural sciences)

STUDYING THE PROPERTIES OF NANOSCALE STRUCTURES CREATED ON THE SURFACE OF THE SI/CU P SYSTEM FILMS SI/CU

Alisher Тursunov^▸^▾
Akbar Аxmedov^▸^▾

PDF (Uzbek)

Submitted: October 24, 2023
Published: 2023-10-26

Abstract

Nanophases and films of SiO₂ and metal silicides have been obtained by low-energy (E_o=1-5 keV) implantation of O₂⁺, Ba⁺, Cu⁺ and Co⁺ ions and the by annealing of a free Si/Cu (100) nanofilm systems on the surface. Their surface morphology, composition, energy band parameters, maximum values of the secondary electron emission coefficient, and the quantum yield of photoelectrons have been determined. In particular, it has been shown that the band gap of metal silicides is 0.3-0.4 eV and their specific resistance is 100-500 mkOm×cm.

References

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[1] . A.L. Stepanov, V.I. Nuzhdin, V.F. Valeev, V.V. Vorobev, A.M. Rogov, Y.N. Osin «Study of silicon surface implanted by silver ions», Vacuum 159 (2019) 353–357.(A.L. Stepanov, V.I. Nuzhdin, V.F. Valeyev, V.V. Vorobev, A.M. Rogov, Y.N. Osin «Kumush ionlari bilan implantatsiya qilingan kremniy sirtini o‘rganish», Vakuum 159 (2019) 353-357. )

[2] . D.N.Leong, M.A.Harry, K.J.Reeson, and K.P.Homewood, "On the origin of 1.5µm luminescence in ion beam synthesis β-FeSi2". Appl. Phys. Letters. V.68, 1649 (1996) (D.N.Leong, M.A.Harry, K.J.Reeson, va K.P.Homevood, " β-FeSi2 ning ion nurlari sintezida 1,5µm luminesansning kelib chiqishi haqida".)

[3] . В.А.Гриценко, «Атомная структура аморфных нестехиометрических оксидов и нитридов кремния» УФН, 178 727–737 (2008). (V.A.Grisenko, « Amorf nestoxiometrik kremniy oksidlari va nitridlarning atom tuzilishi» UFN, 178 727–737 (2008))

[4] . К.В.Карабельников, П.А.Карасев, А.И.Титов, ФТП, Т.47, 206 (2013). (K.V.Karabelnikov, P.A.Karasev, A.I.Titov, FTP, T.47, 206 (2013)

[5] . А.А.Алексеев, Д.А.Олянич, Т.В.Утас, В.С.Котляр, А.В.Зотов, А.А.Саранин, ЖТФ, Т.85, вып.10, 94 (2015). (A.A.Alekseyev, D.A.Olyanich, T.V.Utas, V.S.Kotlyar, A.V.Zotov, A.A.Saranin, JTF, T.85, nashr.10, 94 (2015)

[6] . Ю.А. Ницук, М.И. Киосе, Ю.Ф. Вакстон, В.А. Смынтына, И.Р. Яцунский // ФиТП, 2019, Т.53, вып.3. С. 381-387. (Yu.A.Nisuk, M.I.Kiose, Yu.F.Vakston, V.A. Smitina, I.R.Yasunskiy // FiTP, 2019, T.53, nashr.3. S. 381-387.)

[7] . S.B. Donaev, F. Djurabekova, D.A. Tashmukhamedova, B.E. Umirzakov «Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation», Physics Status Solidi (C) Current Topics in Solid State Physics, V.12. Issue 1-2, January 2015, P.89-93. (S.B. Donayev, F. Djurabekova, D.A. Tashmuhamedova, B.E. Umirzaqov «GaAs va Si sirtlarida ion implantatsiyasi orqali nano o‘lchovli tuzilmalarni hosil qilish», Fizika holati Solidi (C) Qattiq jism fizikasining dolzarb mavzulari, V.12. Nashr 1-2, Yanvar 2015, P.89-93.)

[8] . D. Wang and Z.-Q. Zou, Nanotechnology 20, 275607 (2009). (D.Vang va Z.-Q. Zou, Nanotexnologiya 20, 275607(2009)

[9] . F. Komarov, L. Vlasukova, M. Greben, O. Milchanin, J. Zuk, W. Wesch, E. Wendler, and A. Togambaeva, Nucl. Instrum. and Methods In Phys. Res., Sect. B 307, 102 (2013). (F.Komarov, L. Vlasukova, M. Greben, O. Milchanin, J.Zuk, V.Vesch, E. Vendler, va A.Togambayeva, Nukl. Instrum. va fizikada usullar. Res., Sekt. B 307,102 (2013).

[10] . Donaev S.B., Djurabekova F., Tashmukhamedova D.A. and Umirzakov B.E. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation. Physica status solidi (c) 12 (1-2), 89-93, doi.org/10.1002/pssc.201400156. (Donayev S.B., Djurabekova F., Tashmuhamedova D.A. va Umirzaqov B.E. GaAs va Si sirtlarida ion implantatsiyasi yordamida nano o‘lchovli tuzilmalarni hosil qilish. Fizika holati mustahkam (c) 12 (1-2), 89-93, doi.org/10.1002/pssc.201400156.)