SI/CU PLYONKA TIZIMINING YUZASIDA YARATILGAN NANO O‘LCHOVLI TUZILMALARNING XUSUSIYATLARINI O‘RGANISH

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Nashr qilingan: Oct 26, 2023
Kalit so‘zlar:
kremniy, plyonka, energiya, nanoelektronika, elektron, oksid, yarimo‘tkazgich

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Тursunov Alisher Ravshan o‘g‘li
Shahrisabz branch of the Tashkent Institute of Chemistry and Technology
Аxmedov Akbar Akramovich
Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

Annotatsiya

Past energiyali (E0 = 1-5 keV) О2+, Ва+, Cu+ va Со+ ionlarini implantatsiya qilish usuli bilan hamda so‘ngra qizdirilib, erkin nanoplyonka tizimi Si/Cu(100) yuzasida SiO2 va metall silitsidlari nanofazalari va plyonkalari olingan. Ularning sirt morfologiyasi, tarkibi, energiya zonalari parametrlari, ikkilamchi elektron emissiyasi koeffitsientining maksimal qiymati va fotoelektronlarning kvant chiqishi aniqlandi. Xususan, metall silisidlarning taqiqlangan zona oralig‘i 0,3-0,4 eV, qarshilik esa - 100-500 mkOm×sm ekanligi ko‘rsatilgan.

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Qanday qilib iqtibos keltirish kerak
Тursunov A., & Аxmedov A. (2023). SI/CU PLYONKA TIZIMINING YUZASIDA YARATILGAN NANO O‘LCHOVLI TUZILMALARNING XUSUSIYATLARINI O‘RGANISH. Farg’ona Davlat Universiteti, 29(2), 129. Retrieved from https://journal.fdu.uz/index.php/sjfsu/article/view/2383
Maqola
№. 2 (2023): FarDU ilmiy xabarlar jurnali (Aniq va tabiiy fanlar)
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Mualliflar biografiyasi

Тursunov Alisher Ravshan o‘g‘li, Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

Toshkent Kimyo – Texnologiya Instituti Shahrisabz filiali Kimyoviy texnologiya va sifat menejmenti kafedrasi assistent o‘qituvchisi

Аxmedov Akbar Akramovich, Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

Toshkent Kimyo – Texnologiya Instituti Shahrisabz filiali Kimyoviy texnologiya va sifat menejmenti kafedrasi assistent o‘qituvchisi

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