STUDYING THE PROPERTIES OF NANOSCALE STRUCTURES CREATED ON THE SURFACE OF THE SI/CU P SYSTEM FILMS SI/CU

Authors

Shahrisabz branch of the Tashkent Institute of Chemistry and Technology
Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

Keywords:

silicon, film, energy, nanoelectronics, electron, oxide, semiconductor.

Abstract

Nanophases and films of SiO₂ and metal silicides have been obtained by low-energy (E_o=1-5 keV) implantation of O₂⁺, Ba⁺, Cu⁺ and Co⁺ ions and the by annealing of a free Si/Cu (100) nanofilm systems on the surface. Their surface morphology, composition, energy band parameters, maximum values of the secondary electron emission coefficient, and the quantum yield of photoelectrons have been determined. In particular, it has been shown that the band gap of metal silicides is 0.3-0.4 eV and their specific resistance is 100-500 mkOm×cm.

Author Biographies

, Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

Toshkent Kimyo – Texnologiya Instituti Shahrisabz filiali Kimyoviy texnologiya va sifat menejmenti kafedrasi assistent o‘qituvchisi
, Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

Toshkent Kimyo – Texnologiya Instituti Shahrisabz filiali Kimyoviy texnologiya va sifat menejmenti kafedrasi assistent o‘qituvchisi

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STUDYING THE PROPERTIES OF NANOSCALE STRUCTURES CREATED ON THE SURFACE OF THE SI/CU P SYSTEM FILMS SI/CU

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Abstract

Author Biographies

, Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

, Shahrisabz branch of the Tashkent Institute of Chemistry and Technology

References

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