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Physics and technology

No. 1 (2023): Scientific journal of the Fergana State University (Exact and natural sciences)

INVESTIGATION OF THE INFLUENCE OF COMPREHENSIVE HYDROSTATISTICAL PRESSURE ON THE ELECTRICAL PROPERTIES OF N-SI, N-SI AND N-SI SAMPLES

Submitted
June 24, 2023
Published
2023-07-05

Abstract

The effect of all-round hydrostatic compression (0÷60∙108 Pa) on the electrical properties of silicon single crystals compensated with nickel and gadolinium has been studied. It has been established that the baric dependence of the resistivity of n-Si<Ni> and n-Si<Gd> samples, measured in the dynamic mode, is nonmonotonic, and the change in resistivity at low pressures ≥2∙108 Pa is irreversible, which is due to decay of impurity deposits of nickel and gadolinium.

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