Bi2Te3 / Sb2Te3 YARIMO‘TKAZGICH YUPQA PARDALARNING TERMOELEKTRIK XUSUSIYATLARI
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Annotatsiya
Ushbu maqolada n-tipli Bi2Te3 va p-tipli Sb2Te3 yarimo'tkazgich yupqa pardalar olinilishi va tavsifi haqida ma’lumotlar keltirilgan. Yarimo'tkazgich yupqa pardalar, issiqlik bilan bug'lanish (co-evaporation) yo'li bilan qalinligi 25 mkm bo'lgan polimid (kapton) substratga olingan. Birgalikda bug'lanish (co-evaporation) usuli boshlang'ich materialni tayyorlash uchun ko'proq vaqt talab qiladigan yoki murakkabroq va qimmatroq cho'ktirish uskunalarini talab qiladigan boshqa usullar bilan solishtirganda arzon, sodda va ishonchli hisoblanadi. n va p tipidagi yarimo'tkazgich yupqa pardalarni Zebek koeffitsientlari -189 µV·K-1 va +140 µV·K-1 elektr qarshiligi esa 7.7 µΩ·m va 15.1 µΩ·m xona haroratida o'lchandi. Bu qiymatlar birgalikda purkash (co-sputtering) yoki elektrokimyoviy yotqizish (ECD) natijasida olingan yarimo'tkazgich yupqa pardalardan ko’ra yaxshiroq va metall-organik kimyoviy bug‘larning cho‘kishi (MOCVD) yoki juda qisqa vaqtda bug'lanish (flash evaporation) natijasida olingan yarimo'tkazgich yupqa pardalarga yaqinroqdir. Yuqori ko'rsatkichlari tufayli bu yarimo'tkazgich yupqa pardalar haroratni nazorat qilish va telekommunikatsiya uchun lazer bilan sovutish uchun foydali bo'lgan mikro-Pelte elementini ishlab chiqarish uchun ishlatiladi.
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