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Physics and technology

No. 2 (2020): Scientific journal of the Fergana State University

TO THE THEORY OF THE EFFECTIVE HAMILTONIAN OF CURRENT CARRIERS IN SEMICONDUCTORS

Submitted
June 22, 2023
Published
2023-06-22

Abstract

The matrix elements of the effective Hamiltonian of current carriers are calculated as in the Kane approximation, where the conduction band, the valence band consisting of light and heavy hole subbands, and the spin-split band, as well as in the Luttinger-Kohn model, are considered.

References

  1. Charles Kittel. Introduction to Solid State Physics. John Wiley and Sons, Inc. All. Rights reserved. 2005.
  2. Ziman J.M. Principles of the Theory of Solids. Cambridge University Press, 1972.
  3. Mohammad Abdul Wahab. Solid State Physics: Structure and Properties of Materials Alpha Science International, -2005. -596 p. 1842652184, 9781842652183.
  4. Neil W. Ashcroft, Mermin Ashcroft, Dan Wei, N.David Mermin. Solid State Physics. CENGAGE Learning Asia, -2016.
  5. Cardona Yu Peter, Cardona Manuel. Fundamentals of Semiconductor Physics. Per. from English I.I. Reshina. Ed. B.P. Zakharcheni. - 3rd ed., Rev. and add. −M .: Fizmatlit, -2002. -560 s. http://www.twirpx.com/file/221809/.
  6. Bir G. L., Pikus G. E. Symmetry and Strain-induced Effects in Semiconductors. Wiley, 1974 - 484 p. ISBN 0470073217, 9780470073216.
  7. Ivchenko E.L., Rasulov R.Ya. Symmetry and real band structure of half-conductors. −T.: − Fan, 1989.
  8. [8] Landau L.D., Lifshitz E.M. Quantum Mechanics. 3rd edition. Non-Relativistic Theory. Pergamon. -1977.