DETERMINATION OF MICROPARAMETERS OF CHALCOGENIDE THIN CURTAINS

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Published: Jun 25, 2024
Keywords:
Chalcogenide, AFK - effect, AFME - effect, p – n multilayer junction structure, thermoelectric generator, recombination rate, effective mobility, photocurrent, microparameter.

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Shohjahon Yuldashev
Farg'ona davlat universiteti
https://orcid.org/0009-0000-3919-0807
Rayxona To‘lanova
Farg‘ona davlat universiteti
https://orcid.org/0009-0002-9755-3914

Abstract

Anomalous photomagnetic effect is mainly observed in thin layers of AFK effect, which generate high photovoltage and photomagnetic voltage by the p–n mechanism. It was known that a typical representative of such layers is an alloy of cadmium tellurium and antimony and selenium. It has now been found that AFK-layers can also be obtained from cadmium, mercury and tellurium alloys (KRT). The formation mechanism of anomalous high photovoltage in AFK-layers obtained from this alloy is photovoltaic (p-n-transition). Taking this into account, anomalous photomagnetic voltage generation was also found in cadmium, mercury and tellurium (CdHg)Te, AFK-layers.

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How to Cite
Yuldashev, S., & To‘lanova, R. (2024). DETERMINATION OF MICROPARAMETERS OF CHALCOGENIDE THIN CURTAINS. Scientific Journal of the Fergana State University, 30(3), 129. Retrieved from https://journal.fdu.uz/index.php/sjfsu/article/view/3699
Issue
No. 3 (2024): FarDU.Ilmiy xabarlar jurnali (Aniq va tabiiy fanlar)
Section
Physics and technology
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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Author Biographies

Shohjahon Yuldashev, Farg'ona davlat universiteti

Farg‘ona davlat universiteti, t.f.b.f.d (PhD)

Rayxona To‘lanova, Farg‘ona davlat universiteti

Farg‘ona davlat universiteti talabasi

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